English
Spain
Rusia
Italy
ChinaDRDNB26W-7
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DRDNB26W-7
BESCHREIBUNG
TRANS PREBIAS NPN 50V SOT363
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50 V 600 mA 200 MHz 200 mW Surface Mount SOT-363
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
220 Ohms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Base Product Number
DRDNB26
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
DRDNB26W7
DRDNB26WDIDKR
DRDNB26WDITR
DRDNB26WDICT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Diodes Incorporated DRDNB26W-7
Dokumente und Medien
Datasheets
1(DRDzzzzW)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Devices EOL 22/May/2018)
PCN Design/Specification
1(Bond Wire 16/Sept/2008)
HTML Datasheet
1(DRDzzzzW)
Product Drawings
()
Menge Preis
-
Stellvertreter
-