Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIS414DN-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 20A PPAK1212-8
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 20A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount PowerPAK® 1212-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
795 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.4W (Ta), 31W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS414

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SIS414DNT1GE3
SIS414DN-T1-GE3DKR
SIS414DN-T1-GE3CT
SIS414DN-T1-GE3TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIS414DN-T1-GE3

Dokumente und Medien

Datasheets
1(SiS414DN)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SiS414DN)

Menge Preis

-

Stellvertreter

Teil Nr. : SISA88DN-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 37,568
Einzelpreis. : $0.51000
Ersatztyp. : Similar
Teil Nr. : RQ3E080BNTB
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 40,756
Einzelpreis. : $0.50000
Ersatztyp. : Similar
Teil Nr. : RQ3E100MNTB1
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 5,261
Einzelpreis. : $1.00000
Ersatztyp. : Similar