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ChinaBUZ32H3045AATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUZ32H3045AATMA1
BESCHREIBUNG
MOSFET N-CH 200V 9.5A TO263-3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 9.5A (Tc) 75W (Tc) Surface Mount PG-TO263-3-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
BUZ32
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BUZ32L3045AIN-ND
BUZ32 H3045A
BUZ32H3045AIN-ND
SP000736086
SP000102174
BUZ32 L3045A
BUZ32L3045AXT
BUZ32H3045AIN
BUZ32 L3045A-ND
BUZ32L3045AIN
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BUZ32H3045AATMA1
Dokumente und Medien
Datasheets
1(BUZ32 H3045A)
Other Related Documents
1(Part Number Guide)
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1(Data Processing Systems)
HTML Datasheet
1(BUZ32 H3045A)
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