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ChinaFQA34N20L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQA34N20L
BESCHREIBUNG
MOSFET N-CH 200V 34A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 34A (Tc) 210W (Tc) Through Hole TO-3P
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
217
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
210W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQA34N20L-FS
FAIFSCFQA34N20L
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQA34N20L
Dokumente und Medien
Datasheets
1(FQA34N20L)
Menge Preis
QUANTITÄT: 217
Einzelpreis: $1.38
Verpackung: Tube
MinMultiplikator: 217
Verpackung: Tube
MinMultiplikator: 217
Stellvertreter
-