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ChinaHUFA75329D3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HUFA75329D3
BESCHREIBUNG
MOSFET N-CH 55V 20A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 20A (Tc) 128W (Tc) Through Hole IPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
417
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCHUFA75329D3
2156-HUFA75329D3-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUFA75329D3
Dokumente und Medien
Datasheets
1(HUFA75329D3)
Menge Preis
QUANTITÄT: 417
Einzelpreis: $0.72
Verpackung: Tube
MinMultiplikator: 417
Verpackung: Tube
MinMultiplikator: 417
Stellvertreter
-