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ChinaIRFSL7537PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFSL7537PBF
BESCHREIBUNG
MOSFET N-CH 60V 173A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 173A (Tc) 230W (Tc) Through Hole TO-262
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
170
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®, StrongIRFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
173A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7020 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-IRFSL7537PBF
INFIRFIRFSL7537PBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRFSL7537PBF
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 170
Einzelpreis: $1.77
Verpackung: Bulk
MinMultiplikator: 170
Verpackung: Bulk
MinMultiplikator: 170
Stellvertreter
-