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ChinaMJE521G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MJE521G
BESCHREIBUNG
TRANS NPN 40V 4A TO126
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 40 V 4 A 40 W Through Hole TO-126
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
MJE521G Models
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A, 1V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
MJE521
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-MJE521G-ON
MJE521GOS
ONSONSMJE521G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJE521G
Dokumente und Medien
Datasheets
1(MJE521)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Apr/2010)
HTML Datasheet
1(MJE521)
EDA Models
1(MJE521G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : 2N5190G
Hersteller. : onsemi
Verfügbare Menge. : 169
Einzelpreis. : $0.86000
Ersatztyp. : Similar
Verfügbare Menge. : 169
Einzelpreis. : $0.86000
Ersatztyp. : Similar