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TEILNUMMER DES HERSTELLERS
IPU60R3K4CEAKMA1
BESCHREIBUNG
CONSUMER
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2.6A (Tj) Through Hole PG-TO251-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU60R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPU60R3K4CEAKMA1-IT
INFINFIPU60R3K4CEAKMA1
SP001579180
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU60R3K4CEAKMA1
Dokumente und Medien
Datasheets
1(IPx60R3K4CE)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPx60R3K4CE)
Menge Preis
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Stellvertreter
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