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ChinaRN1101CT(TPL3)
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TEILNUMMER DES HERSTELLERS
RN1101CT(TPL3)
BESCHREIBUNG
TRANS PREBIAS NPN 20V 0.05A CST3
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20 V 50 mA 50 mW Surface Mount CST3
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
50 mA
Voltage - Collector Emitter Breakdown (Max)
20 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
50 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
CST3
Base Product Number
RN1101
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
RN1101CT(TPL3)DKR
RN1101CT(TPL3)TR
RN1101CT(TPL3)CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1101CT(TPL3)
Dokumente und Medien
Datasheets
1(RN110x)
HTML Datasheet
1(RN110x)
Menge Preis
-
Stellvertreter
-