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ChinaRJH65D27BDPQ-A0#T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJH65D27BDPQ-A0#T2
BESCHREIBUNG
IGBT TRENCH 650V 100A TO247A
DETAILIERTE BESCHREIBUNG
IGBT Trench 650 V 100 A 375 W Through Hole TO-247A
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
RJH65D27BDPQ-A0#T2 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Active
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
100 A
Vce(on) (Max) @ Vge, Ic
1.65V @ 15V, 50A
Power - Max
375 W
Switching Energy
1mJ (on), 1.5mJ (off)
Input Type
Standard
Gate Charge
175 nC
Td (on/off) @ 25°C
20ns/165ns
Test Condition
400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)
80 ns
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247A
Base Product Number
RJH65D27
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Renesas Electronics Corporation RJH65D27BDPQ-A0#T2
Dokumente und Medien
Datasheets
1(RJH65D27BDPQ-A0)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(RJH65D27BDPQ-A0#T2 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IGW75N65H5XKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 155
Einzelpreis. : $5.47000
Ersatztyp. : Direct
Verfügbare Menge. : 155
Einzelpreis. : $5.47000
Ersatztyp. : Direct