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TEILNUMMER DES HERSTELLERS
8EWS12S
BESCHREIBUNG
DIODE GEN PURP 1.2KV 8A DPAK
DETAILIERTE BESCHREIBUNG
Diode 1200 V 8A Surface Mount TO-252AA (DPAK)
HERSTELLER
Vishay General Semiconductor - Diodes Division
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Vishay General Semiconductor - Diodes Division
Series
-
Package
Tube
Product Status
Obsolete
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 8 A
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
-
Supplier Device Package
TO-252AA (DPAK)
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
8EWS12
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
VS8EWS12S-ND
*8EWS12S
VS-8EWS12S
VS8EWS12S
VS-8EWS12S-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Vishay General Semiconductor - Diodes Division 8EWS12S
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1(8EWSxxS)
HTML Datasheet
1(8EWSxxS)
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