Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPB034N06N3GATMA1
BESCHREIBUNG
MOSFET N-CH 60V 100A TO263-7
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 100A (Tc) 167W (Tc) Surface Mount PG-TO263-7
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB034N

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IPB034N06N3 GDKR-ND
IPB034N06N3 GTR
IPB034N06N3 GDKR
SP000397990
IPB034N06N3 G
IPB034N06N3GATMA1TR
IPB034N06N3GATMA1DKR
IPB034N06N3 GCT
IPB034N06N3G
IPB034N06N3GATMA1CT
IPB034N06N3 GTR-ND
IPB034N06N3 GCT-ND
IPB034N06N3 G-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB034N06N3GATMA1

Dokumente und Medien

Datasheets
1(IPB034N06N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB034N06N3 G)

Menge Preis

-

Stellvertreter

Teil Nr. : IPB017N06N3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $3.53000
Ersatztyp. : Direct
Teil Nr. : IPB034N06N3GATMA2
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.71526
Ersatztyp. : Parametric Equivalent