Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPB180N06S4H1ATMA1
BESCHREIBUNG
MOSFET N-CH 60V 180A TO263-7
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
21900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB180

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IPB180N06S4-H1
2156-IPB180N06S4H1ATMA1-ITTR
INFINFIPB180N06S4H1ATMA1
SP000415562
IPB180N06S4-H1-ND
IPB180N06S4H1ATMA1TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB180N06S4H1ATMA1

Dokumente und Medien

Datasheets
1(IPB180N06S4-H1)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPB180N06S4-H1)

Menge Preis

-

Stellvertreter

Teil Nr. : IPB180N06S4H1ATMA2
Hersteller. : Infineon Technologies
Verfügbare Menge. : 6,672
Einzelpreis. : $4.04000
Ersatztyp. : Direct
Teil Nr. : IRFS7530TRL7PP
Hersteller. : Infineon Technologies
Verfügbare Menge. : 4,366
Einzelpreis. : $3.62000
Ersatztyp. : Similar