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ChinaIXT-1-1N100S1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXT-1-1N100S1
BESCHREIBUNG
MOSFET N-CH 1000V 1.5A 8-SOIC
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 1.5A (Tc)
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
-
Supplier Device Package
-
Package / Case
-
Base Product Number
IXT-1
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXT-1-1N100S1
Dokumente und Medien
Environmental Information
1(Ixys IC REACH)
Menge Preis
-
Stellvertreter
-