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ChinaFQAF10N80
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQAF10N80
BESCHREIBUNG
MOSFET N-CH 800V 6.7A TO3PF
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQAF10N80 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
113W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Base Product Number
FQAF1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQAF10N80
Dokumente und Medien
Datasheets
1(FQAF10N80)
Environmental Information
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HTML Datasheet
1(FQAF10N80)
EDA Models
1(FQAF10N80 Models)
Menge Preis
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Stellvertreter
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