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ChinaFDI045N10A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDI045N10A
BESCHREIBUNG
MOSFET N-CH 100V 120A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 120A (Tc) 263W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FDI045
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDI045N10A
Dokumente und Medien
Datasheets
1(FDP045N10A, FDI045N10A)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
1(onsemi RoHS)
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
Menge Preis
-
Stellvertreter
Teil Nr. : FDI045N10A-F102
Hersteller. : onsemi
Verfügbare Menge. : 475
Einzelpreis. : $4.24000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 475
Einzelpreis. : $4.24000
Ersatztyp. : Parametric Equivalent
Teil Nr. : IPI045N10N3GXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 469
Einzelpreis. : $3.76000
Ersatztyp. : Similar
Verfügbare Menge. : 469
Einzelpreis. : $3.76000
Ersatztyp. : Similar