English
Spain
Rusia
Italy
ChinaBSS816NW L6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSS816NW L6327
BESCHREIBUNG
MOSFET N-CH 20V 1.4A SOT323-3
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 1.4A (Ta) 500mW (Ta) Surface Mount PG-SOT323
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V
Rds On (Max) @ Id, Vgs
160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id
750mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 2.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT323
Package / Case
SC-70, SOT-323
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
BSS816NW L6327-ND
BSS816NWL6327
SP000464852
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS816NW L6327
Dokumente und Medien
Datasheets
1(BSS816NW)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSS816NW)
Menge Preis
-
Stellvertreter
Teil Nr. : BSS816NWH6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 146,502
Einzelpreis. : $0.41000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 146,502
Einzelpreis. : $0.41000
Ersatztyp. : Parametric Equivalent