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ChinaIRLR8103
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TEILNUMMER DES HERSTELLERS
IRLR8103
BESCHREIBUNG
MOSFET N-CH 30V 89A D-PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 89A (Ta) 89W (Ta) Surface Mount TO-252AA (DPAK)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
89A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
89W (Ta)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
-
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLR8103
Dokumente und Medien
Datasheets
1(IRLR8103/8503)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLR8103/8503)
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