Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIR876DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 100V 40A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR876

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SIR876DP-T1-GE3DKR
SIR876DPT1GE3
SIR876DP-T1-GE3CT
SIR876DP-T1-GE3TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR876DP-T1-GE3

Dokumente und Medien

Datasheets
1(SIR876DP)
PCN Obsolescence/ EOL
1(PCN- SIL-0722014 10/Jun/2014)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SIR876DP)

Menge Preis

-

Stellvertreter

Teil Nr. : SIR876ADP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 5
Einzelpreis. : $1.61000
Ersatztyp. : Direct
Teil Nr. : BSC109N10NS3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 39,343
Einzelpreis. : $1.62000
Ersatztyp. : Similar
Teil Nr. : STL40N10F7
Hersteller. : STMicroelectronics
Verfügbare Menge. : 5,788
Einzelpreis. : $1.63000
Ersatztyp. : Similar