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ChinaFQNL2N50BTA
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQNL2N50BTA
BESCHREIBUNG
MOSFET N-CH 500V 350MA TO92-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Base Product Number
FQNL2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFQNL2N50BTA
2156-FQNL2N50BTA-OS
FQNL2N50BTATB
FQNL2N50BTACT
FQNL2N50BTA-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQNL2N50BTA
Dokumente und Medien
Datasheets
1(FQNL2N50BTA Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 09/Oct/2020)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assembly/Mold Chg 20/Mar/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $0.63
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Stellvertreter
Teil Nr. : STQ1NC45R-AP
Hersteller. : STMicroelectronics
Verfügbare Menge. : 0
Einzelpreis. : $95.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $95.00000
Ersatztyp. : Similar