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China2SJ181-90STL
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SJ181-90STL
BESCHREIBUNG
P-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 600 V 500mA (Ta) 20W (Tc) Surface Mount DPAK-3
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
169
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
DPAK-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNS2SJ181-90STL
2156-2SJ181-90STL
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation 2SJ181-90STL
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 169
Einzelpreis: $1.78
Verpackung: Bulk
MinMultiplikator: 169
Verpackung: Bulk
MinMultiplikator: 169
Stellvertreter
-