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ChinaFDFMA3P029Z
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDFMA3P029Z
BESCHREIBUNG
MOSFET P-CH 30V 3.3A 6MICROFET
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 3.3A (Ta) 1.4W (Ta) Surface Mount 6-MLP (2x2)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,110
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)
Rds On (Max) @ Id, Vgs
87mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-MLP (2x2)
Package / Case
6-WDFN Exposed Pad
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FDFMA3P029Z
FAIFSCFDFMA3P029Z
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDFMA3P029Z
Dokumente und Medien
Datasheets
1(FDFMA3P029Z Datasheet)
Menge Preis
QUANTITÄT: 1110
Einzelpreis: $0.27
Verpackung: Bulk
MinMultiplikator: 1110
Verpackung: Bulk
MinMultiplikator: 1110
Stellvertreter
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