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ChinaNP82N04MDG-S18-AY
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NP82N04MDG-S18-AY
BESCHREIBUNG
MOSFET N-CH 40V 82A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-220-3
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
128
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
82A (Tc)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 41A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 143W (Tc)
Operating Temperature
175°C
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NP82N04MDG-S18-AY-RE
RENRNSNP82N04MDG-S18-AY
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation NP82N04MDG-S18-AY
Dokumente und Medien
Datasheets
1(NP82N04NDG-S18-AY)
Menge Preis
QUANTITÄT: 128
Einzelpreis: $2.35
Verpackung: Tube
MinMultiplikator: 128
Verpackung: Tube
MinMultiplikator: 128
Stellvertreter
-