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TEILNUMMER DES HERSTELLERS
JAN2N3737
BESCHREIBUNG
TRANS NPN 40V 1.5A TO46-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 40 V 1.5 A 500 mW Through Hole TO-46-3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Discontinued at allaboutcomponents.com
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.5 A
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A, 1.5V
Power - Max
500 mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/395
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Supplier Device Package
TO-46-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
1086-2355
1086-2355-MIL
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JAN2N3737
Dokumente und Medien
Datasheets
1(2N3735(L), 2N3737(UB))
Environmental Information
()
PCN Assembly/Origin
1(Manufacturing Change 23/Feb/2021)
HTML Datasheet
1(2N3735(L), 2N3737(UB))
Menge Preis
-
Stellvertreter
-