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ChinaMDS60L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MDS60L
BESCHREIBUNG
RF TRANS NPN 65V 1.09GHZ 55AW
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 65V 4A 1.03GHz ~ 1.09GHz 120W Chassis Mount 55AW
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
65V
Frequency - Transition
1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f)
-
Gain
10dB
Power - Max
120W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA, 5V
Current - Collector (Ic) (Max)
4A
Operating Temperature
200°C (TJ)
Mounting Type
Chassis Mount
Package / Case
55AW
Supplier Device Package
55AW
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
150-MDS60L
MDS60L-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Microsemi Corporation MDS60L
Dokumente und Medien
Datasheets
1(MDS60L)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices OBS 13/Aug/2018)
Menge Preis
-
Stellvertreter
-