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ChinaIGLD60R190D1AUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IGLD60R190D1AUMA1
BESCHREIBUNG
GAN N-CH 600V 10A LSON-8
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 10A (Tc) 62.5W (Tc) Surface Mount PG-LSON-8-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IGLD60R190D1AUMA1 Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolGaN™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 960µA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-LSON-8-1
Package / Case
8-LDFN Exposed Pad
Base Product Number
IGLD60
Umweltverträgliche Exportklassifikationen
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-IGLD60R190D1AUMA1DKR
448-IGLD60R190D1AUMA1TR
448-IGLD60R190D1AUMA1CT
SP001705426
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IGLD60R190D1AUMA1
Dokumente und Medien
Datasheets
1(IGLD60R190D1)
EDA Models
1(IGLD60R190D1AUMA1 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IGLD60R190D1AUMA3
Hersteller. : Infineon Technologies
Verfügbare Menge. : 2,344
Einzelpreis. : $9.45000
Ersatztyp. : Direct
Verfügbare Menge. : 2,344
Einzelpreis. : $9.45000
Ersatztyp. : Direct