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ESJA04-03A
BESCHREIBUNG
DIODE GEN PURP 3KV 1MA M1A
DETAILIERTE BESCHREIBUNG
Diode 3000 V 1mA Through Hole M1A
HERSTELLER
EIC SEMICONDUCTOR INC.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
300
Lagerbestände
Technische Daten
Mfr
EIC SEMICONDUCTOR INC.
Series
-
Package
Bag
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
3000 V
Current - Average Rectified (Io)
1mA
Voltage - Forward (Vf) (Max) @ If
12 V @ 10 mA
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
80 ns
Current - Reverse Leakage @ Vr
2 µA @ 3000 V
Capacitance @ Vr, F
-
Mounting Type
Through Hole
Package / Case
Axial
Supplier Device Package
M1A
Operating Temperature - Junction
120°C (Max)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
HTSUS
8541.10.0000
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/EIC SEMICONDUCTOR INC. ESJA04-03A
Dokumente und Medien
Datasheets
1(ESJA04-03A)
HTML Datasheet
1(ESJA04-03A)
Menge Preis
QUANTITÄT: 300
Einzelpreis: $0.65
Verpackung: Bag
MinMultiplikator: 300
Verpackung: Bag
MinMultiplikator: 300
Stellvertreter
-