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ChinaNTD6600N-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD6600N-1G
BESCHREIBUNG
MOSFET N-CH 100V 12A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
146mOhm @ 6A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.28W (Ta), 56.6W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NTD66
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NTD6600N-1G-ON
ONSONSNTD6600N-1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD6600N-1G
Dokumente und Medien
Datasheets
1(NTD6600N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 01/Oct/2008)
HTML Datasheet
1(NTD6600N)
Menge Preis
-
Stellvertreter
-