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ChinaRFP50N05
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TEILNUMMER DES HERSTELLERS
RFP50N05
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 50 V 50A (Tc) 132W (Tc) Through Hole TO-220AB
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
325
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250nA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 20 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
132W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRFP50N05
2156-RFP50N05
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFP50N05
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 325
Einzelpreis: $0.92
Verpackung: Bulk
MinMultiplikator: 325
Verpackung: Bulk
MinMultiplikator: 325
Stellvertreter
-