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ChinaFDG6303N-F169
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDG6303N-F169
BESCHREIBUNG
MOSFET 2N-CH 25V 0.5A SC88
DETAILIERTE BESCHREIBUNG
Mosfet Array 25V 500mA (Ta) 300mW (Ta) Surface Mount SC-88 (SC-70-6)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Rds On (Max) @ Id, Vgs
450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Power - Max
300mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88 (SC-70-6)
Base Product Number
FDG6303
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi FDG6303N-F169
Dokumente und Medien
Datasheets
1(FDG6303N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev Eol 12/Jul/2018)
HTML Datasheet
1(FDG6303N)
Menge Preis
-
Stellvertreter
-