Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
HN1B04F(TE85L,F)
BESCHREIBUNG
TRANS NPN/PNP 30V 0.5A SM6
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SM6
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 100mA, 1V
Power - Max
300mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN1B04

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Andere Namen

HN1B04F(TE85LF)TR
HN1B04F(TE85LF)CT
HN1B04F (TE85L,F)
HN1B04F(TE85LF)DKR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN1B04F(TE85L,F)

Dokumente und Medien

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Menge Preis

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Stellvertreter

Teil Nr. : FMB2227A
Hersteller. : onsemi
Verfügbare Menge. : 75
Einzelpreis. : $0.51000
Ersatztyp. : Similar