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ChinaBUK654R8-40C,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK654R8-40C,127
BESCHREIBUNG
MOSFET N-CH 40V 100A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 100A (Tc) 158W (Tc) Through Hole TO-220AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
158W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
BUK65
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BUK654R840C127
2156-BUK654R8-40C127
568-7501-5
954-BUK654R8-40C127
BUK654R8-40C,127-ND
934064242127
NEXNXPBUK654R8-40C,127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK654R8-40C,127
Dokumente und Medien
Datasheets
1(BUK654R8-40C)
Environmental Information
()
PCN Obsolescence/ EOL
1(MCU Dip Supply Situation 12/May/2015)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Menge Preis
QUANTITÄT: 398
Einzelpreis: $0.75
Verpackung: Tube
MinMultiplikator: 398
Verpackung: Tube
MinMultiplikator: 398
Stellvertreter
-