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ChinaIDC51D120T6MX1SA3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IDC51D120T6MX1SA3
BESCHREIBUNG
DIODE GP 1.2KV 100A WAFER
DETAILIERTE BESCHREIBUNG
Diode 1200 V 100A Surface Mount Sawn on foil
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
100A
Voltage - Forward (Vf) (Max) @ If
2.05 V @ 100 A
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
18 µA @ 1200 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Sawn on foil
Operating Temperature - Junction
-40°C ~ 175°C
Base Product Number
IDC51D120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Infineon Technologies IDC51D120T6MX1SA3
Dokumente und Medien
Datasheets
1(IDC51D120T6M)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IDC51D120T6M)
Menge Preis
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Stellvertreter
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