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ChinaNTGD4169FT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTGD4169FT1G
BESCHREIBUNG
MOSFET N-CH 30V 2.6A 6TSOP
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 2.6A (Ta) 900mW (Ta) Surface Mount 6-TSOP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTGD4169FT1G Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
90mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
295 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
-25°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
NTGD41
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-NTGD4169FT1G
ONSONSNTGD4169FT1G
2156-NTGD4169FT1G-ONTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTGD4169FT1G
Dokumente und Medien
Datasheets
1(NTGD4169F)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 21/Jan/2010)
HTML Datasheet
1(NTGD4169F)
EDA Models
1(NTGD4169FT1G Models)
Menge Preis
-
Stellvertreter
-