Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NTD4854N-1G
BESCHREIBUNG
MOSFET N-CH 25V 15.7A/128A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 15.7A (Ta), 128A (Tc) 1.43W (Ta), 93.75W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75

Technische Daten

Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
15.7A (Ta), 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
49.2 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.43W (Ta), 93.75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NTD48

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

ONSONSNTD4854N-1G
2156-NTD4854N-1G-ON

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4854N-1G

Dokumente und Medien

Datasheets
1(NTD4854N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 13/Apr/2009)
HTML Datasheet
1(NTD4854N)

Menge Preis

QUANTITÄT: 650
Einzelpreis: $0.46
Verpackung: Tube
MinMultiplikator: 650

Stellvertreter

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