English
Spain
Rusia
Italy
ChinaIRFU4105ZPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFU4105ZPBF
BESCHREIBUNG
MOSFET N-CH 55V 30A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IRFU4105ZPBF
*IRFU4105ZPBF
SP001552434
INFINFIRFU4105ZPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU4105ZPBF
Dokumente und Medien
Datasheets
1(IRFR4105ZPbF, IRFU4105ZPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFR4105ZPbF, IRFU4105ZPbF)
Simulation Models
1(IRFR4105Z Saber Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IRFU4615PBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 1,792
Einzelpreis. : $1.84000
Ersatztyp. : Similar
Verfügbare Menge. : 1,792
Einzelpreis. : $1.84000
Ersatztyp. : Similar