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ChinaAUIRF7343Q
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AUIRF7343Q
BESCHREIBUNG
MOSFET N/P-CH 55V 4.7A 8SOIC
DETAILIERTE BESCHREIBUNG
Mosfet Array 55V 4.7A, 3.4A 2W Surface Mount 8-SOIC
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
AUIRF7343Q Models
STANDARDPAKET
95
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
4.7A, 3.4A
Rds On (Max) @ Id, Vgs
50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
AUIRF7343
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies AUIRF7343Q
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