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ChinaNAND01GR3B2CZA6E
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TEILNUMMER DES HERSTELLERS
NAND01GR3B2CZA6E
BESCHREIBUNG
IC FLASH 1GBIT PARALLEL 63VFBGA
DETAILIERTE BESCHREIBUNG
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 63-VFBGA (9.5x12)
HERSTELLER
Micron Technology Inc.
STANDARD LEADTIME
EDACAD-MODELL
NAND01GR3B2CZA6E Models
STANDARDPAKET
1,260
Lagerbestände
Technische Daten
Mfr
Micron Technology Inc.
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND
Memory Size
1Gbit
Memory Organization
128M x 8
Memory Interface
Parallel
Write Cycle Time - Word, Page
25ns
Access Time
25 ns
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
63-TFBGA
Supplier Device Package
63-VFBGA (9.5x12)
Base Product Number
NAND01
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Micron Technology Inc. NAND01GR3B2CZA6E
Dokumente und Medien
Datasheets
1(NAND01G-B2B, NAND02G-B2C)
PCN Assembly/Origin
1(Tray Pkg Label Chgs 8/Oct/2020)
PCN Packaging
1(Standard Pkg Label Chg 20/Feb/2019)
HTML Datasheet
1(NAND01G-B2B, NAND02G-B2C)
EDA Models
1(NAND01GR3B2CZA6E Models)
Menge Preis
-
Stellvertreter
-