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ChinaG2R120MT33J
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
G2R120MT33J
BESCHREIBUNG
SIC MOSFET N-CH TO263-7
DETAILIERTE BESCHREIBUNG
N-Channel 3300 V 35A Surface Mount TO-263-7
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
G2R120MT33J Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
G2R™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
35A
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3706 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
G2R120
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor G2R120MT33J
Dokumente und Medien
Datasheets
1(SiC MOSFETs Selector Guide)
EDA Models
1(G2R120MT33J Models)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $108.03
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-