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ChinaFDR8508P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDR8508P
BESCHREIBUNG
MOSFET 2P-CH 30V 3A SUPERSOT 8
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 3A 800mW Surface Mount SuperSOT™-8
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
201
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3A
Rds On (Max) @ Id, Vgs
52mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 15V
Power - Max
800mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSOP (0.130", 3.30mm Width)
Supplier Device Package
SuperSOT™-8
Base Product Number
FDR85
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-FDR8508P-FSTR-ND
FAIFSCFDR8508P
2156-FDR8508P
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Fairchild Semiconductor FDR8508P
Dokumente und Medien
Datasheets
1(FDR8508P)
Menge Preis
QUANTITÄT: 201
Einzelpreis: $1.5
Verpackung: Bulk
MinMultiplikator: 201
Verpackung: Bulk
MinMultiplikator: 201
Stellvertreter
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