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ChinaSI4511DY-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4511DY-T1-GE3
BESCHREIBUNG
MOSFET N/P-CH 20V 7.2A 8-SOIC
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 7.2A, 4.6A 1.1W Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
7.2A, 4.6A
Rds On (Max) @ Id, Vgs
14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4511
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI4511DYT1GE3
SI4511DY-T1-GE3CT
SI4511DY-T1-GE3DKR
SI4511DY-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI4511DY-T1-GE3
Dokumente und Medien
Datasheets
1(SI4511DY)
PCN Obsolescence/ EOL
1(SIL-1072014 Rev0 17/Dec/2014)
Menge Preis
-
Stellvertreter
Teil Nr. : DMC2020USD-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 0
Einzelpreis. : $0.80000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.80000
Ersatztyp. : Similar