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ChinaFGL35N120FTDTU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FGL35N120FTDTU
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT Trench Field Stop 1200 V 70 A 368 W Through Hole HPM F2
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
70 A
Current - Collector Pulsed (Icm)
105 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 35A
Power - Max
368 W
Switching Energy
2.5mJ (on), 1.7mJ (off)
Input Type
Standard
Gate Charge
210 nC
Td (on/off) @ 25°C
34ns/172ns
Test Condition
600V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)
337 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Supplier Device Package
HPM F2
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FGL35N120FTDTU
FAIFSCFGL35N120FTDTU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor FGL35N120FTDTU
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 50
Einzelpreis: $6.06
Verpackung: Bulk
MinMultiplikator: 50
Verpackung: Bulk
MinMultiplikator: 50
Stellvertreter
-