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ChinaF415MR12W2M1B76BOMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
F415MR12W2M1B76BOMA1
BESCHREIBUNG
SIC 4N-CH 1200V 75A AG-EASY1B
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 75A (Tj) Chassis Mount AG-EASY1B-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
F415MR12W2M1B76BOMA1 Models
STANDARDPAKET
15
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
EasyPACK™ CoolSiC™
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Full Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
75A (Tj)
Rds On (Max) @ Id, Vgs
15mOhm @ 75A, 15V
Vgs(th) (Max) @ Id
5.55V @ 30mA
Gate Charge (Qg) (Max) @ Vgs
186nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
5520pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1B-2
Base Product Number
F415MR
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP005411640
448-F415MR12W2M1B76BOMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies F415MR12W2M1B76BOMA1
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev LDD Rev 23/Dec/2022)
EDA Models
1(F415MR12W2M1B76BOMA1 Models)
Menge Preis
-
Stellvertreter
-