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ChinaHUF75329P3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HUF75329P3
BESCHREIBUNG
MOSFET N-CH 55V 49A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 49A (Tc) 128W (Tc) Through Hole TO-220-3
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
468
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 49A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-HUF75329P3-HC
HARHARHUF75329P3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation HUF75329P3
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 468
Einzelpreis: $0.64
Verpackung: Tube
MinMultiplikator: 468
Verpackung: Tube
MinMultiplikator: 468
Stellvertreter
-