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ChinaNTD4979NT4G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD4979NT4G
BESCHREIBUNG
MOSFET N-CH 30V 9.4A/41A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Surface Mount DPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTD4979NT4G Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
837 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.38W (Ta), 26.3W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
NTD49
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSNTD4979NT4G
2156-NTD4979NT4G-ONTR-ND
2156-NTD4979NT4G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4979NT4G
Dokumente und Medien
Datasheets
1(NTD4979N)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(3Q2105 EOL 6/Nov/2015)
PCN Assembly/Origin
1(Qualification Multiple Devices 24/Sep/2013)
HTML Datasheet
1(NTD4979N)
EDA Models
1(NTD4979NT4G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FDD8880
Hersteller. : onsemi
Verfügbare Menge. : 5,407
Einzelpreis. : $0.89000
Ersatztyp. : Similar
Verfügbare Menge. : 5,407
Einzelpreis. : $0.89000
Ersatztyp. : Similar
Teil Nr. : DMN3010LK3-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 1,639
Einzelpreis. : $0.62000
Ersatztyp. : Similar
Verfügbare Menge. : 1,639
Einzelpreis. : $0.62000
Ersatztyp. : Similar