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ChinaNDD03N80Z-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NDD03N80Z-1G
BESCHREIBUNG
MOSFET N-CH 800V 2.9A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 2.9A (Tc) 96W (Tc) Through Hole I-Pak
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-Pak
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
NDD03
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NDD03N80Z-1G-ON
ONSONSNDD03N80Z-1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDD03N80Z-1G
Dokumente und Medien
Datasheets
1(NDD03N80Z)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Sep/2017)
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NDD03N80Z)
Menge Preis
-
Stellvertreter
Teil Nr. : FCU3400N80Z
Hersteller. : onsemi
Verfügbare Menge. : 3,600
Einzelpreis. : $0.43000
Ersatztyp. : Similar
Verfügbare Menge. : 3,600
Einzelpreis. : $0.43000
Ersatztyp. : Similar
Teil Nr. : STD2N80K5
Hersteller. : STMicroelectronics
Verfügbare Menge. : 6,117
Einzelpreis. : $1.52000
Ersatztyp. : Similar
Verfügbare Menge. : 6,117
Einzelpreis. : $1.52000
Ersatztyp. : Similar