Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPD06P003NATMA1
BESCHREIBUNG
MOSFET P-CH 60V 22A TO252-3
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 22A (Tc) 83W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD06P

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD06P003NATMA1

Dokumente und Medien

Datasheets
1(IPD06P003N)

Menge Preis

-

Stellvertreter

Teil Nr. : IPD650P06NMATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 11,816
Einzelpreis. : $1.62000
Ersatztyp. : Parametric Equivalent
Teil Nr. : IPD650P06NMSAUMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Parametric Equivalent
Teil Nr. : SQD19P06-60L_T4GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 6,934
Einzelpreis. : $1.58000
Ersatztyp. : Similar