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ChinaSTI24NM65N
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STI24NM65N
BESCHREIBUNG
MOSFET N-CH 650V 19A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 19A (Tc) 160W (Tc) Through Hole I2PAK
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STI24N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STI24NM65N
Dokumente und Medien
Datasheets
1(STx24NM65N)
HTML Datasheet
1(STx24NM65N)
Menge Preis
-
Stellvertreter
Teil Nr. : IPI65R190C6XKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 480
Einzelpreis. : $3.50000
Ersatztyp. : Similar
Verfügbare Menge. : 480
Einzelpreis. : $3.50000
Ersatztyp. : Similar