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China2SK536-TB-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SK536-TB-E
BESCHREIBUNG
N-CHANNEL ENHANCEMENT MOS SILICO
DETAILIERTE BESCHREIBUNG
N-Channel 50 V 100mA (Ta) 200mW (Ta) Surface Mount 3-CP
HERSTELLER
Sanyo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,411
Lagerbestände
Technische Daten
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id
-
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-CP
Package / Case
TO-236-3, SC-59, SOT-23-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-2SK536-TB-E
ONSSNY2SK536-TB-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Sanyo 2SK536-TB-E
Dokumente und Medien
Datasheets
1(2SK536-TB-E Datasheet)
Menge Preis
QUANTITÄT: 1411
Einzelpreis: $0.21
Verpackung: Bulk
MinMultiplikator: 1411
Verpackung: Bulk
MinMultiplikator: 1411
Stellvertreter
-