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TEILNUMMER DES HERSTELLERS
SPU02N60S5BKMA1
BESCHREIBUNG
MOSFET N-CH 600V 1.8A TO251-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
5.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-21
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
SPU02N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-SPU02N60S5BKMA1
SP000012422
SPU02N60S5-ND
SPU02N60S5X
INFINFSPU02N60S5BKMA1
SPU02N60S5
SPU02N60S5IN-ND
SPU02N60S5XK
SPU02N60S5IN
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPU02N60S5BKMA1
Dokumente und Medien
Datasheets
1(SP(U,D)02N60S5)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SP(U,D)02N60S5)
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